Publication | Closed Access
Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
93
Citations
9
References
1987
Year
Materials ScienceMaterials EngineeringPlasma Cvd TechniqueBoron NitrideEngineeringPhysicsSubstrate Bias PotentialNanoelectronicsCubic BnSurface ScienceApplied PhysicsIon BombardmentCubic Boron NitrideHexagonal Boron NitrideN 2Thin FilmsPlasma Processing
Cubic BN thin films are formed in RF discharge in B 2 H 6 and N 2 at low pressures under a magnetic field to confine the plasma, for negatively self-biased substrate electrodes. Ion bombardment on the growing surface is suggested to play an important role in the formation of cubic BN. The deposited films are characterized by infrared absorption spectroscopy and transmission electron microscopy which show that they are composed of microcrystals of cubic BN with 100-200 Å grain size.
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