J. Klatt - Concepedia

Author

J. Klatt

Leibniz Institute for High Performance Microelectronics

Also Known As

J. Klatt, J. L. Klatt, J.J. Klatt, J.L. Klatt, Jeffrey Klatt

Publications

612

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for High Performance Microelectronics University of Illinois Urbana-Champaign

About

J. Klatt is an author at Leibniz Institute for High Performance Microelectronics specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	580
2	Applied Physics	13	17	580
3	Chemistry	8	8	284
4	Natural Sciences	4	4	71
5	Electrical Engineering	3	3	70

J. Klatt

Publications

580

Citations

H-Index

Page 1

	Year	Citations
Surfactant-controlled solid phase epitaxy of germanium on silicon H. J. Osten, J. Klatt, G. Lippert, Physical Review Letters Materials ScienceMaterials EngineeringAntimony SurfactantIsland Formation StageEngineering	1992	86
Measurement of stress and relaxation in Si1−<i>x</i>Ge<i>x</i> layers by Raman line shift and x-ray diffraction B. Dietrich, E. Bugiel, J. Klatt, Journal of Applied Physics Materials ScienceSemiconductorsEngineeringCrystalline DefectsSurface Science	1993	70
Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te H. J. Osten, J. Klatt, G. Lippert, Journal of Applied Physics Materials EngineeringMonolayer AntimonyGermanium AdatomsSurface CharacterizationEngineering	1993	57
The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100) H. J. Osten, G. Lippert, J. Klatt Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceMaterials EngineeringGe LayersSurface CharacterizationMolecular-beam Epitaxy	1992	49
<i>In situ</i> monitoring of strain relaxation during antimony-mediated growth of Ge and Ge<i>1−y</i> C<i>y</i> layers on Si(001) using reflection high energy electron diffraction H. J. Osten, J. Klatt Applied Physics Letters Materials ScienceNew MaterialEngineeringPhysicsCrystal Growth Technology	1994	49
Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant H. J. Osten, J. Klatt, G. Lippert, Applied Physics Letters Critical ThicknessEngineeringSmooth Germanium FilmsSilicon On InsulatorNanoelectronics	1992	43
Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation R. P. Bryan, J. J. Coleman, L. M. Miller, Applied Physics Letters PhotonicsElectrical EngineeringMev Oxygen ImplantationEngineeringPhysics	1989	38
Ion beam mixing in Ag-Pd alloys J. Klatt, R. S. Averback, David Peak Applied Physics Letters Materials ScienceIon ImplantationEngineeringPhysicsApplied Physics	1989	37
Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100) H. J. Osten, E. Bugiel, J. Klatt Applied Physics Letters EngineeringChemistrySilicon On InsulatorNanoelectronicsSilicene	1992	34
Surfactant-mediated growth of germanium on Si(100) by MBE and SPE H. J. Osten, J. Klatt, G. Lippert, Journal of Crystal Growth Materials EngineeringEngineeringSurface ChemistrySurface ScienceApplied Physics	1993	21

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