J. Klatt

Surfactant-controlled solid phase epitaxy of germanium on silicon

H. J. Osten, J. Klatt, G. Lippert et al. · Physical Review Letters · 1992 · 86 citations

Materials Science, Materials Engineering, Antimony Surfactant +12

Measurement of stress and relaxation in Si1−<i>x</i>Ge<i>x</i> layers by Raman line shift and x-ray diffraction

B. Dietrich, E. Bugiel, J. Klatt et al. · Journal of Applied Physics · 1993 · 70 citations

Materials Science, Semiconductors, Engineering +14

Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te

H. J. Osten, J. Klatt, G. Lippert et al. · Journal of Applied Physics · 1993 · 57 citations

Materials Engineering, Monolayer Antimony, Germanium Adatoms +13

The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100)

H. J. Osten, G. Lippert, J. Klatt · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 49 citations

Materials Science, Materials Engineering, Ge Layers +15

<i>In situ</i> monitoring of strain relaxation during antimony-mediated growth of Ge and Ge<i>1−y</i> C<i>y</i> layers on Si(001) using reflection high energy electron diffraction

H. J. Osten, J. Klatt · Applied Physics Letters · 1994 · 49 citations

Materials Science, New Material, Engineering +12