H. Mochizuki - Concepedia

Author

H. Mochizuki

Asahi Kasei (Japan)

Also Known As

H. Mochizuki, Hiroshi Mochizuki Hiroshi Mochizuki

Publications

349

Citations

H-Index

Concepts

All Affiliations

Asahi Kasei (Japan)Toshiba (Japan)University of Zagreb Fujitsu (Japan)

About

H. Mochizuki is an author at Asahi Kasei (Japan) specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	201
2	Applied Physics	5	5	76
3	Computer Engineering	2	2	76
4	Education	1	1	11
5	Computer Science	1	1	12

H. Mochizuki

Publications

249

Citations

H-Index

Page 1

	Year	Citations
A 256-Mb SDRAM using a register-controlled digital DLL A. Hatakeyama, H. Mochizuki, T. Aikawa, IEEE Journal of Solid-State Circuits Hardware SecurityClock Access TimeElectrical Engineering256-Mb SdramVlsi Design	1997	64
Charge-orbital ordering and ferromagnetic chains in single-layered manganite crystals T. Kimura, K. Hatsuda, Yohtaro Ueno, Physical review. B, Condensed matter	2001	48
Lateral High-Speed Bipolar Transistors on SOI for RF SoC Applications I.-S.M. Sun, Wai Tung Ng, K. Kanekiyo, IEEE Transactions on Electron Devices Electrical EngineeringPhysical Design (Electronics)EngineeringRf SemiconductorBipolar Transistor	2005	38
Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications Takashi Kawakubo, Kazuhide Abe, S. Komatsu, IEEE Electron Device Letters Non-volatile MemoryEngineeringNovel Ferroelectric EpitaxialEmerging Memory TechnologyFerroelectric Random-access Memory	1997	25
Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT) Tomislav Suligoj, M. Koričić, H. Mochizuki, Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	2010	18
High voltage BiCDMOS technology on bonded 2 μm SOI integrating vertical npn pnp, 60 V-LDMOS and MPU, capable of 200°C operation H. Funaki, Y. Yamaguchi, Yoshimasa Kawaguchi, μM SoiElectrical EngineeringEngineeringVlsi DesignAdvanced Packaging (Semiconductors)	2002	12
A 64K DRAM with 35 ns static column operation F. Baba, H. Mochizuki, T. Yabu, IEEE Journal of Solid-State Circuits Hardware SecurityNon-volatile MemoryEngineeringComputer EngineeringComputer Architecture	1983	12
Precise extraction of emitter resistance from an improved floating collector measurement K. Morizuka, O. Hidaka, H. Mochizuki IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringPrecision MeasurementEngineeringIntrinsic Collector	1995	11
Horizontal Current Bipolar Transistor (HCBT) for the low-cost BiCMOS technology Tomislav Suligoj, M. Koričić, H. Mochizuki, Low-power ElectronicsElectrical EngineeringEngineeringHigh-speed ElectronicsActive Transistor Region	2009	11
Impact of emitter interface treatment on the horizontal current bipolar transistor (HCBT) characteristics and RF circuit performance Josip Žilak, M. Koričić, Tomislav Suligoj, Hf Cleaning StepElectrical EngineeringSemiconductor DeviceEngineeringIntrinsic Transistor Structure	2015	10

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