H. Mochizuki

A 256-Mb SDRAM using a register-controlled digital DLL

A. Hatakeyama, H. Mochizuki, T. Aikawa et al. · IEEE Journal of Solid-State Circuits · 1997 · 64 citations

Hardware Security, Clock Access Time, Electrical Engineering +12

Charge-orbital ordering and ferromagnetic chains in single-layered manganite crystals

T. Kimura, K. Hatsuda, Yohtaro Ueno et al. · Physical review. B, Condensed matter · 2001 · 48 citations

Lateral High-Speed Bipolar Transistors on SOI for RF SoC Applications

I.-S.M. Sun, Wai Tung Ng, K. Kanekiyo et al. · IEEE Transactions on Electron Devices · 2005 · 38 citations

Electrical Engineering, Physical Design (Electronics), Engineering +12

Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications

Takashi Kawakubo, Kazuhide Abe, S. Komatsu et al. · IEEE Electron Device Letters · 1997 · 25 citations

Non-volatile Memory, Engineering, Novel Ferroelectric Epitaxial +17

Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)

Tomislav Suligoj, M. Koričić, H. Mochizuki et al. · 2010 · 18 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +10