IEEE Electron Device Letters · 1997 · 25 citations · 8 references
Non-volatile MemoryEngineeringNovel Ferroelectric EpitaxialEmerging Memory TechnologyFerroelectric Random-access MemoryFerroelectric ApplicationNanoelectronicsEpitaxial GrowthMaterials EngineeringMaterials ScienceElectrical EngineeringOxide ElectronicsMicroelectronicsTio/sub 3/Epitaxial Bsto CapacitorStrontium Titanate SubstratesEnergy CeramicApplied PhysicsFerroelectric MaterialsSemiconductor Memory
A novel ferroelectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ (BSTO)/SrRuO/sub 3/ (SRO) heteroepitaxial technique on Si and strontium titanate substrates. Distinct ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BSTO capacitor showed distinct ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far. Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.
8