Syoji Yamada - Concepedia

Author

Syoji Yamada

Japan Advanced Institute of Science and Technology

Also Known As

Syoji YAMADA, Syoji Yamada

Publications

665

Citations

H-Index

Concepts

All Affiliations

Japan Advanced Institute of Science and Technology NTT (Japan)NTT Basic Research Laboratories NTT (United States)

About

Syoji Yamada is an author at Japan Advanced Institute of Science and Technology specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	495
2	Applied Physics	14	17	510
3	Natural Sciences	4	4	77
4	Chemical Engineering	1	1	13
5	Chemistry	1	1	13

Syoji Yamada

Publications

510

Citations

H-Index

Page 1

	Year	Citations
DC Drift Phenomena in LiNbO<sub>3</sub> Optical Waveguide Devices Syoji Yamada, Makoto Minakata Japanese Journal of Applied Physics Directional Coupler ModulatorPhotonicsOptical MaterialsEngineeringPhysics	1981	107
Narrow two-dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth Hiromitsu Asai, Syoji Yamada, Takashi Fukui Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1987	57
Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs Syoji Yamada, Toshiki Makimōto Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringQuasi-two-dimensional ElectronsPhysics	1990	40
Low Temperature High Electron Mobility in In<sub>0.75</sub>Ga<sub>0.25</sub>As/In<sub>0.75</sub>Al<sub>0.25</sub>As Modulation-Doped Hetrostructures Grown on GaAs Substrate Shin-ichiro Gozu, Chul-Un Hong, Syoji Yamada Japanese Journal of Applied Physics SemiconductorsMaterials ScienceWide-bandgap SemiconductorSemiconductor DeviceEngineering	1998	36
Nonparabolic subband structure of Ga0.47In0.53As-InP quantum wells Syoji Yamada, Akihito Taguchi, Akira Sugimura Applied Physics Letters Wide-bandgap SemiconductorQuantum SciencePhotonicsPhotoluminescenceEngineering	1985	36
Saturation of phase coherence length in GaAs/AlGaAs on-facet quantum wires Yoshino K. Fukai, Syoji Yamada, Hayato Nakano Applied Physics Letters Categoryquantum ElectronicsCharge ExcitationsEngineeringPositive MagnetoresistancePhase Coherence Length	1990	31
Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates Shin-ichiro Gozu, Kazuhiro Tsuboki, Masaomi Hayashi, Journal of Crystal Growth Semiconductor TechnologyElectrical EngineeringLow TemperaturesEngineeringPhysics	1999	27
Effective mass and ground state of AlAs quantum wells studied by magnetoresistance measurements K. Maezawa, Takashi Mizutani, Syoji Yamada Journal of Applied Physics SemiconductorsMagnetoresistance MeasurementsSemiconductor TechnologyCategoryquantum ElectronicsLow Temperatures	1992	26
Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure Yuuki Sato, Shin-ichiro Gozu, Tomohiro Kita, Physica E Low-dimensional Systems and Nanostructures Wide-bandgap SemiconductorSpintronicsElectrical EngineeringEngineeringPhysics	2002	25
Small mesas and holes in split-gate quantum wires acting as ‘‘artificial impurities’’ fabricated with scanning tunneling microscope Syoji Yamada, Masafumi Yamamoto Journal of Applied Physics Categoryquantum ElectronicsEngineeringWire SurfaceSmall MesaOptoelectronic Devices	1996	19

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