Nonparabolic subband structure of Ga0.47In0.53As-InP quantum wells

Abstract

Nonparabolic subband structure of GaInAs-InP quantum wells is studied theoretically. The dispersion relations for electron, light hole, and split-off hole subbands are obtained using the envelope function approximation taking into account band nonparabolicity. Reported experimental electron effective mass values and photoluminescence energies for wide quantum wells are resonably explained by the present theory. The experimental photoluminescence energies, for the well width less than 50 Å, differ significantly from the calculated results.