K. S. Kim

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped <i>n</i>-type GaN epilayers

M. G. Cheong, K. S. Kim, Chang‐Seok Oh et al. · Applied Physics Letters · 2000 · 57 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +13

Codoping characteristics of Zn with Mg in GaN

K. S. Kim, Min Han, Guili Yang et al. · Applied Physics Letters · 2000 · 28 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +8

Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition

Hyung Koun Cho, Jeong Yong Lee, K. S. Kim et al. · Applied Physics Letters · 2000 · 23 citations · Full text

Wide-bandgap Semiconductor, Thick Gan Layer, Engineering +17

AlxGa1-xN-Based Materials and Heterostructures

Patrick Kung, A. Saxler, D. Walker et al. · MRS Proceedings · 1996 · 16 citations

Materials Engineering, Materials Science, Engineering +3