M. G. Cheong - Concepedia

Author

M. G. Cheong

Also Known As

Cheong, M.G., Cheong, M.G.., M G Cheong, M. G. Cheong, M.G Cheong, M.G. Cheong, M.‐G. Cheong, Minseok Cheong, Myung Goo Cheong

Publications

353

Citations

H-Index

Concepts

All Affiliations

Jeonbuk National University University of Strathclyde Chiba University National University of Singapore

About

M. G. Cheong is an author at Jeonbuk National University specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	15	332
2	Applied Physics	12	15	332
3	Electrical Engineering	10	10	222
4	Chemical Engineering	1	1	11
5	Chemistry	1	1	19

M. G. Cheong

Publications

332

Citations

H-Index

Page 1

	Year	Citations
Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped <i>n</i>-type GaN epilayers M. G. Cheong, K. S. Kim, Chang‐Seok Oh, Applied Physics Letters Wide-bandgap SemiconductorRoom TemperatureElectrical EngineeringSemiconductor TechnologyEdge Dislocations	2000	57
Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells Mun Seok Jeong, Y.-W. Kim, Jeffrey O. White, Applied Physics Letters PhotonicsPhotoluminescenceEngineeringPhysicsIngan/gan Quantum Wells	2001	39
Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition M. G. Cheong, K. S. Kim, C. S. Kim, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringMg ImpuritiesEngineering	2002	38
Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition K. S. Kim, M. G. Cheong, Chang‐Hee Hong, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2000	30
Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition M. G. Cheong, H. S. Yoon, R. J. Choi, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	2001	27
Two different behavior patterns of photoluminescence depending on Mg doping rate in <i>p</i>-type GaN epilayers Sun-Yeong Jeong, H.W. Shim, H. S. Yoon, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	19
Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells M. G. Cheong, C. Liu, H. W. Choi, Journal of Applied Physics SemiconductorsPhotoluminescenceEngineeringPhysicsIngan/gan Quantum Wells	2003	19
Bias effect on the luminescent properties of rectangular and trapezoidal quantum-well structures M. G. Cheong, R. J. Choi, Eun‐Kyung Suh, Applied Physics Letters EngineeringLuminescent PropertiesLuminescence PropertyOptical PropertiesNanoelectronics	2003	15
Rutherford backscattering analysis of GaN decomposition H. W. Choi, M. G. Cheong, Mukhtar Ahmed Rana, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceEngineeringCrystalline DefectsPhysicsSurface Science	2003	15
Properties of InGaN/GaN quantum wells and blue light emitting diodes M. G. Cheong, E.‐K. Suh, H.J Lee Journal of Luminescence Electrical EngineeringSolid-state LightingEngineeringPhysicsIngan/gan Quantum Wells	2002	14

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