M. G. Cheong

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped <i>n</i>-type GaN epilayers

M. G. Cheong, K. S. Kim, Chang‐Seok Oh et al. · Applied Physics Letters · 2000 · 57 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +13

Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells

Mun Seok Jeong, Y.-W. Kim, Jeffrey O. White et al. · Applied Physics Letters · 2001 · 39 citations

Photonics, Photoluminescence, Engineering +13

Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition

M. G. Cheong, K. S. Kim, C. S. Kim et al. · Applied Physics Letters · 2002 · 38 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition

K. S. Kim, M. G. Cheong, Chang‐Hee Hong et al. · Applied Physics Letters · 2000 · 30 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

M. G. Cheong, H. S. Yoon, R. J. Choi et al. · Journal of Applied Physics · 2001 · 27 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18