Jean-Michel Sallese

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Jean-Michel Sallese, Nicolas Chevillon, Christophe Lallement et al. · IEEE Transactions on Electron Devices · 2011 · 240 citations · Full text

Device Modeling, Semiconductors, Electrical Engineering +14

A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism

Jean-Michel Sallese, François Krummenacher, F. Prégaldiny et al. · Solid-State Electronics · 2004 · 169 citations · Full text

Device Modeling, Electrical Engineering, Engineering +8

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

B. Diagne, F. Prégaldiny, Christophe Lallement et al. · Solid-State Electronics · 2007 · 52 citations · Full text

Device Modeling, Electrical Engineering, Engineering +8

Physics-based compact model for ultra-scaled FinFETs

Ashkhen Yesayan, F. Prégaldiny, Nicolas Chevillon et al. · Solid-State Electronics · 2011 · 38 citations · Full text

Device Modeling, Engineering, Physics +8

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Jean-Michel Sallese, Nicolas Chevillon, F. Prégaldiny et al. · IEEE Transactions on Electron Devices · 2010 · 26 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +13