Nicolas Chevillon

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Jean-Michel Sallese, Nicolas Chevillon, Christophe Lallement et al. · IEEE Transactions on Electron Devices · 2011 · 240 citations · Full text

Device Modeling, Semiconductors, Electrical Engineering +14

A Common Core Model for Junctionless Nanowires and Symmetric Double-Gate FETs

Jean-Michel Sallèse, Farzan Jazaeri, Lucian Barbut et al. · IEEE Transactions on Electron Devices · 2013 · 51 citations · Full text

Device Modeling, Electrical Engineering, Symmetric Double-gate Fets +13

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Nicolas Chevillon, J-M. Sallese, Christophe Lallement et al. · IEEE Transactions on Electron Devices · 2011 · 40 citations · Full text

Device Modeling, Electrical Engineering, Mosfet Topology +14

Physics-based compact model for ultra-scaled FinFETs

Ashkhen Yesayan, F. Prégaldiny, Nicolas Chevillon et al. · Solid-State Electronics · 2011 · 38 citations · Full text

Device Modeling, Engineering, Physics +8

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Jean-Michel Sallese, Nicolas Chevillon, F. Prégaldiny et al. · IEEE Transactions on Electron Devices · 2010 · 26 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +13