Concepedia

Author

O. I. Khrykin

Institute for Physics of Microstructures

Also Known As

Khrykin O. I., Khrykin, O. I., O I Khrykin, O. I. KHRYKIN, O. I. Khrykin, O. Khrykin, O.I. Khrykin, Oleg I. Khrykin, Oleg Khrykin, V.A. Ivanov

75

Publications

367

Citations

11

H-Index

31

Concepts

All Affiliations

Institute for Physics of MicrostructuresInstitute of Physics
OI

About

O. I. Khrykin is an author at Institute for Physics of Microstructures specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

6

6

96

2

Applied Physics

5

5

81

3

Natural Sciences

2

2

23

4

Education

1

1

15

5

Computer Engineering

1

1

15

O. I. Khrykin

×

11

Publications

260

Citations

11

H-Index

YearCitations

Quantum corrections to the conductivity in two-dimensional systems: Agreement between theory and experiment

G. M. Minkov, O. É. Rut, A. V. Germanenko,

Physical review. B, Condensed matter

2001

57

Electron-electron interaction with decreasing conductance

G. M. Minkov, O. É. Rut, A. V. Germanenko,

Physical review. B, Condensed matter

2003

37

Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

V. I. Shashkin, A. V. Murel, V. M. Danil’tsev,

Semiconductors

2002

35

Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy

Yu. N. Drozdov, N. V. Baidus, O. I. Khrykin,

Semiconductors

2003

24

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

V. I. Shashkin, V. M. Danil’tsev, A.V. Maslovsky,

Radiophysics and Quantum Electronics

2005

23

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers

P. A. Yunin, Yu. N. Drozdov, O. I. Khrykin,

Surface and Interface Analysis

2016

19

Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

V. I. Shashkin, S. Rushworth, V. M. Danil’tsev,

Journal of Electronic Materials

2001

16

Novel technique for monitoring of MOVPE processes

А. V. Goryunov, V. M. Danil’tsev, A. Yu. Luk’yanov,

Journal of Crystal Growth

2008

15

Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness

G. M. Minkov, O. É. Rut, A. V. Germanenko,

Physical Review B

2004

12

Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

Yu. N. Buzynin, V. M. Danil’tsev, Yu. N. Drozdov,

Technical Physics Letters

2000

11

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