High T/sub c/ BiSrCaCuO superconductor grown by CVD technique

Manabu Ihara, Takafumi Kimura, Hideki Yamawaki, +1

IEEE Transactions on Magnetics

Materials ScienceMaterials EngineeringSuperconducting MaterialHigh-tc SuperconductivityEngineering +10

Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

Satoshi Toyoda, Jun Okabayashi, Hiroshi Kumigashira, +5

Applied Physics Letters

X-ray SpectroscopyEngineeringAbsorption SpectroscopyChemistrySpectroscopic Property +14

Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation

H. Kamada, T. Tanimura, Satoshi Toyoda, +5

Applied Physics Letters

Reduction ReactionsEngineeringOxidation ResistanceChemistryAnnealed Hfsio +17

Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy

H. Takahashi, Jun Okabayashi, Satoshi Toyoda, +6

Journal of Applied Physics

Electronic DevicesEngineeringElectronic MaterialsPoly-si ElectrodePoly-si Electrodes +13

Single crystal growth and characterization of Bi2Sr2Ca1−xYxCu2Oy by TSFZ method

K. Takamuku, Kazuto Ikeda, Tsutomu Takata, +5

Physica C Superconductivity

Materials ScienceMaterial AnalysisEngineeringCrystal Growth TechnologySuperconductivity +3

Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO₂ Gate Dielectrics

Motoyuki Sato, Satoshi Kamiyama, Takeo Matsuki, +6

Japanese Journal of Applied Physics

Semiconductor TechnologyElectrical EngineeringEngineeringPositive BiasPhysics +9

Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2∕Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy

H. Takahashi, Jun Okabayashi, Satoshi Toyoda, +6

Applied Physics Letters

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device +14

Chemical‐state‐resolved in‐depth profiles of gate‐stack structures on Si studied by angular‐dependent photoemission spectroscopy

Satoshi Toyoda, Jun Okabayashi, M. Oshima, +4

Surface and Interface Analysis

EngineeringSin LayerChemistryChemical‐state‐resolved In‐depth ProfilesSemiconductor Device +14

Photoelectron spectroscopic study of ϰ-(BEDT-TTF)2Cu(NCS)2 organic superconductor

R. Itti, Kazuto Ikeda, I. Hirabayashi, +2

Physica C Superconductivity

Superconducting MaterialHigh-tc SuperconductivityEngineeringNovel SuperconductorsApplied Physics +4

Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

Satoshi Toyoda, Hitoshi Kamada, T. Tanimura, +5

Applied Physics Letters

EngineeringSilicon On InsulatorSemiconductor DeviceHfsion FilmsThermal Stability +14