T. Tanimura

Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation

H. Kamada, T. Tanimura, Satoshi Toyoda et al. · Applied Physics Letters · 2008 · 24 citations

Reduction Reactions, Engineering, Oxidation Resistance +19

Effect of microwave plasma treatment on silicon dioxide films grown by atomic layer deposition at low temperature

T. Tanimura, Yuichiro Watanabe, Yoshihiro Sato et al. · Journal of Applied Physics · 2013 · 19 citations

Engineering, Silicon Dioxide Films, Chemical Deposition +19

Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

Satoshi Toyoda, Hitoshi Kamada, T. Tanimura et al. · Applied Physics Letters · 2010 · 17 citations

Band Discontinuity, Electrical Engineering, Annealing Effects +13

Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura, Satoshi Toyoda, H. Kamada et al. · Applied Physics Letters · 2010 · 12 citations

Engineering, Tunneling Microscopy, Physics +15

Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

Satoshi Toyoda, Hitoshi Kamada, T. Tanimura et al. · Applied Physics Letters · 2008 · 10 citations

Engineering, Silicon On Insulator, Semiconductor Device +16