Applied Physics Letters · 2010 · 17 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsAngle-resolved Photoelectron SpectroscopyAngle-resolved Photoemission SpectroscopyAnnealing EffectsInterfacial Oxide LayersRapid Thermal AnnealingSilicon DioxideThermal AnnealingThermal Annealing Effects
We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high-k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.
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Application of HfSiON as a gate dielectric material
M. R. Visokay, James J. Chambers, Antonio Rotondaro et al. · Applied Physics Letters · 2002 · 377 citations
Natural Sciences, Materials Engineering, Materials Science +17