Nitrogen doping and thermal stability in HfSiOxNy studied by photoemission and x-ray absorption spectroscopy

Satoshi Toyoda, Jun Okabayashi, H. Takahashi, +7

Applied Physics Letters

Materials ScienceX-ray SpectroscopyEngineeringPhysicochemical AnalysisOxide Electronics +12

Overview of the first Wendelstein 7-X long pulse campaign with fully water-cooled plasma facing components

O. Grulke, Christopher G. Albert, J. A. Alcusón, +402

Nuclear Fusion

Crystal structures and band offsets of ultrathin HfO2–Y2O3 composite films studied by photoemission and x-ray absorption spectroscopies

Makoto Komatsu, Ryo Yasuhara, H. Takahashi, +5

Applied Physics Letters

Oxide HeterostructuresMaterials ScienceMaterial AnalysisEngineeringY2o3 Composition Dependence +12

A 450 MHz 64 b RISC processor using multiple threshold voltage CMOS

Takashi Yamashita, N. Yoshida, M. Sakamoto, +15

Low-power ElectronicsElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design +11

Design methodology of high performance microprocessor using ultra-low threshold voltage CMOS

T. Miyake, T. Yamashita, N. Asari, +8

Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignDesign Methodology +11

Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy

H. Takahashi, Jun Okabayashi, Satoshi Toyoda, +6

Journal of Applied Physics

Electronic DevicesEngineeringElectronic MaterialsPoly-si ElectrodePoly-si Electrodes +13

A 240K transistor CMOS array with flexible allocation of memory and channels

H. Takahashi, S. Sato, G. Goto, +3

IEEE Journal of Solid-State Circuits

Hardware SecurityElectrical EngineeringEngineeringVlsi DesignCircuit System +13

Latch-up immunity against noise pulses in a CMOS double well structure

G. Goto, H. Takahashi, T. Nakamura

Pulsive NoiseCircuit SystemMixed-signal Integrated CircuitAnalog DesignDouble Well Structure +4

Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2∕Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy

H. Takahashi, Jun Okabayashi, Satoshi Toyoda, +6

Applied Physics Letters

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device +14

Chemical reaction at the interface between polycrystalline Si electrodes and HfO2∕Si gate dielectrics by annealing in ultrahigh vacuum

H. Takahashi, Satoshi Toyoda, Jun Okabayashi, +6

Applied Physics Letters

EngineeringUltrahigh VacuumOptoelectronic DevicesChemistrySilicon On Insulator +17