A. Kalantarian - Concepedia

Author

A. Kalantarian

Stanford University

Also Known As

A. Kalantarian, Asadollah Kalantarian

Publications

557

Citations

H-Index

Concepts

All Affiliations

Stanford University University at Albany, State University of New York University of Toronto Center for Nanoscale Science and Technology University of Modena and Reggio Emilia

About

A. Kalantarian is an author at Stanford University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	453
2	Applied Physics	6	6	257
3	Biomedical Engineering	2	2	196
4	Education	1	1	46
5	Computer Engineering	1	1	37

A. Kalantarian

Publications

529

Citations

H-Index

Page 1

	Year	Citations
Feasibility study of using microfluidic platforms for visualizing bubble flows in electrolyzer gas diffusion layers Faraz Arbabi, A. Kalantarian, Rami Abouatallah, Journal of Power Sources Bubble FlowsEngineeringBubble DynamicFluid MechanicsFlow Cell	2014	150
Microscopy study of the conductive filament in HfO2 resistive switching memory devices S. Privitera, G. Bersuker, B. Butcher, Microelectronic Engineering Electrical EngineeringEngineeringMicroscopy StudyApplied PhysicsConductive Filament	2013	87
Methodology for High Accuracy Contact Angle Measurement A. Kalantarian, Robert David, A. W. Neumann Langmuir	2009	76
Controlling uniformity of RRAM characteristics through the forming process A. Kalantarian, G. Bersuker, D. C. Gilmer, Materials EngineeringCvf MethodElectrical EngineeringConstant Voltage FormingRram Characteristics	2012	64
Simultaneous Measurement of Contact Angle and Surface Tension Using Axisymmetric Drop-Shape Analysis-No Apex (ADSA-NA) A. Kalantarian, Robert David, Juan Chen, Langmuir EngineeringMeasurementMechanical EngineeringWettingEducation	2011	46
Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs B. Butcher, G. Bersuker, Kristina G. Young-Fisher, Non-volatile MemoryElectrical EngineeringEngineeringHot Forming MethodApplied Physics	2012	37
Modeling the effects of different forming conditions on RRAM conductive filament stability B. Butcher, G. Bersuker, Luca Vandelli, Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringFilament Stability	2013	31
High endurance performance of 1T1R HfO<inf>x</inf> based RRAM at low (&#x003C;20&#x03BC;A) operative current and elevated (150&#x00B0;C) temperature B. Butcher, S. Koveshnikov, D. C. Gilmer, Electrical EngineeringEngineeringElectronic MemoryEmerging Memory TechnologyApplied Physics	2011	25
Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM D. C. Gilmer, G. Bersuker, S. Koveshnikov, Materials EngineeringMaterials ScienceElectrical EngineeringPolarity PreferenceEngineering	2012	13

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