Nobutoshi Aoki

Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyond

S. Inaba, Hirohisa Kawasaki, Kimitoshi Okano et al. · 2007 · 16 citations

Device Modeling, Electrical Engineering, Finfet Sram +15

In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

H. Okamoto, A. Hokazono, K. Adachi et al. · Japanese Journal of Applied Physics · 2008 · 16 citations

Vibrational properties of two boron atoms in silicon

Jun Yamauchi, Nobutoshi Aoki, Ichiro Mizushima · Physical review. B, Condensed matter · 2001 · 15 citations

Total Energy, Engineering, Nuclear Physics +17

Deactivation mechanism of In atoms doped in a Si crystal and reactivation due to codoping with B and C

Jun Yamauchi, Nobutoshi Aoki · Physical Review B · 2005 · 14 citations

First-principles Calculations, Engineering, Si Crystal +19

Anomalous diffusion of lightly implanted As into Si substrate during N2 annealing

Nobutoshi Aoki, Takahisa Kanemura, Ichiro Mizushima · Applied Physics Letters · 1994 · 13 citations

Materials Science, Si Substrate, Engineering +14