Itsuko Sakai

Formation mechanism of sidewall striation in high-aspect-ratio hole etching

Mitsuhiro Omura, Jun-ichi Hashimoto, Takahiro ADACHI et al. · Japanese Journal of Applied Physics · 2019 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by <i>in situ</i> infrared reflection absorption spectroscopy

Hiroshi Yamamoto, Kohei Asano, Kenji Ishikawa et al. · Journal of Applied Physics · 2011 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +17

H2/N2 plasma damage on porous dielectric SiOCH film evaluated by <i>in situ</i> film characterization and plasma diagnostics

Hiroshi Yamamoto, Keigo Takeda, Kenji Ishikawa et al. · Journal of Applied Physics · 2011 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +17

Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching

Tokuhisa Ohiwa, Akihiro Kojima, Makoto Sekine et al. · Japanese Journal of Applied Physics · 1998 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17

Sub-45 nm SiO₂ Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma

Keisuke Kikutani, Takashi Ohashi, Akihiro Kojima et al. · Japanese Journal of Applied Physics · 2008 · 17 citations

Engineering, Materials Engineering, Materials Science +12