J. C. Lou

Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

F. M. Yang, Tien‐Chun Chang, Po‐Tsun Liu et al. · Applied Physics Letters · 2007 · 61 citations

Materials Science, Semiconductors, Electrical Engineering +13

Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

F. M. Yang, Ting‐Chang Chang, Po‐Tsun Liu et al. · Applied Physics Letters · 2007 · 60 citations

Non-volatile Memory, Engineering, Memory Characteristics +18

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 58 citations

Semiconductors, Electrical Engineering, Electronic Devices +15

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

Yu‐Ting Su, Kuan‐Chang Chang, Ting‐Chang Chang et al. · Applied Physics Letters · 2013 · 47 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Performance and characteristics of double layer porous silicon oxide resistance random access memory

Tsung‐Ming Tsai, Kuan‐Chang Chang, Rui Zhang et al. · Applied Physics Letters · 2013 · 41 citations

Materials Science, Non-volatile Memory, Electrical Engineering +13