Jeong-Hyuk Choi

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

Kitae Park, Sang-Wan Nam, Daehan Kim et al. · IEEE Journal of Solid-State Circuits · 2014 · 280 citations

Engineering, Computer Engineering, Electrical Engineering +15

Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

Chang‐Hyun Lee, Sung‐Hoi Hur, You-Cheol Shin et al. · Applied Physics Letters · 2005 · 218 citations

Engineering, Materials Engineering, Materials Science +17

Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells

Jeong-Hyuk Choi, Donggun Park, Kinam Kim · 2003 · 101 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim et al. · IEEE Journal of Solid-State Circuits · 2015 · 98 citations

Engineering, Computer Engineering, Microelectronics +13

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

Ki‐Tae Park, Jin-Man Han, Daehan Kim et al. · 2014 · 97 citations

Engineering, Computer Engineering, Electrical Engineering +14