J. S. Yim

Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

Weon Guk Jeong, P.D. Dapkus, U. H. Lee et al. · Applied Physics Letters · 2001 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +17

Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature

H. D. Kim, W. G. Jeong, J. H. Lee et al. · Applied Physics Letters · 2005 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

J. S. Kim, P. W. Yu, Jae‐Young Leem et al. · Applied Physics Letters · 2001 · 34 citations

Engineering, Materials Engineering, Materials Science +16

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN<i>_x</i>surface passivation layer deposited by low pressure CVD

Sung‐Woon Moon, Jong‐Sub Lee, Deokwon Seo et al. · Japanese Journal of Applied Physics · 2014 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

Deok Won Seo, Hong Goo Choi, J.K. Twynam et al. · IEEE Electron Device Letters · 2014 · 19 citations

Engineering, Electrical Engineering, Materials Science +17