P. W. Yu

Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometry

D. E. Holmes, R.T. Chen, K. Elliott et al. · IEEE Transactions on Electron Devices · 1982 · 83 citations

Engineering, Materials Engineering, Materials Science +17

Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structures

D. C. Reynolds, K. K. Bajaj, C. W. Litton et al. · Physical review. B, Condensed matter · 1984 · 81 citations

Engineering, Materials Science, Condensed Matter Physics +16

Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Hyung Koun Cho, Jeong Yong Lee, Nikhil Sharma et al. · Applied Physics Letters · 2001 · 68 citations

Engineering, Materials Engineering, Materials Science +17

Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy

D. C. Reynolds, K. K. Bajaj, C. W. Litton et al. · Applied Physics Letters · 1985 · 65 citations

Engineering, Materials Engineering, Materials Science +17

Undoped semi-insulating LEC GaAs: a model and a mechanism

J. R. Oliver, Robert Fairman, R.T. Chen et al. · Electronics Letters · 1981 · 52 citations

Engineering, Materials Engineering, Materials Science +17