Shinichiro Takatani - Concepedia

Author

Shinichiro Takatani

Also Known As

S. Takatani, Shin-ichiro Takatani, Shinichiro TAKATANI, Shinichiro Takatani, Shinichiro Takatani Shinichiro Takatani, Takatani, S.

Publications

566

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)Northwestern University

About

Shinichiro Takatani is an author at Hitachi (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	467
2	Applied Physics	12	15	429
3	Electrical Engineering	10	10	238
4	Chemistry	2	2	71
5	Chemical Engineering	1	1	84

Shinichiro Takatani

Publications

467

Citations

H-Index

Page 1

	Year	Citations
Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorption Shinichiro Takatani, T. Kikawa, Masatoshi Nakazawa Physical review. B, Condensed matter EngineeringSemiconductorsIi-vi SemiconductorChemical EngineeringElectron Spectroscopy	1992	84
Pt/PbZr x Ti 1−x O 3 interfacial reaction and Schottky barrier formation studied by x-ray photoelectron spectroscopy: Effect of H2 and O2 annealing Shinichiro Takatani, Hiroshi Miki, Keiko Kushida-Abdelghafar, Journal of Applied Physics X-ray SpectroscopyEngineeringSolid-state ChemistryChemistrySemiconductor Nanostructures	1999	48
Thin-film quantization studies of grey tin epitaxially grown on CdTe(111) Shinichiro Takatani, Yip-Wah Chung Physical review. B, Condensed matter Materials ScienceIi-vi SemiconductorEngineeringPhysicsNanoelectronics	1985	42
Thermal stability of WSi<i>x</i>/GaAs interface Shinichiro Takatani, Naoya Matsuoka, J. Shigeta, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering	1987	40
Effect of H<sub>2</sub> Annealing on a Pt/PbZr<sub>x</sub>Ti<sub>1-x</sub>O<sub>3</sub> Interface Studied by X-Ray Photoelectron Spectroscopy Shinichiro Takatani, Keiko Kushida-Abdelghafar, Hiroshi Miki Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorSchottky Barrier HeightX-ray SpectroscopyEngineering	1997	38
Evidence of Ga<sub>2</sub>Se<sub>3</sub>-Related Compounds on Se-Stabilized GaAs Surfaces Shinichiro Takatani, A. Nakano, Kiyoshi Ogata, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceSe AtomsIi-vi SemiconductorEngineering	1992	34
Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy T. Kikawa, Isao Ochiai, Shinichiro Takatani Surface Science SemiconductorsSurface CharacterizationEngineeringPhysicsElectron Spectroscopy	1994	33
Effect of high temperature reduction on the surface composition of and CO chemisorption on Ni/TiO2 Shinichiro Takatani, Y. W. Chung Applications of Surface Science Materials ScienceCo ChemisorptionSurface CompositionGaseous ReductionEngineering	1984	23
Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level T. Kikawa, Shinichiro Takatani, HiroshiMasuda Tanoue Japanese Journal of Applied Physics Materials ScienceSurface Fermi LevelElectrical EngineeringEngineeringNanoelectronics	1999	19
Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFETs Shinichiro Takatani, Hiroyuki Matsumoto, J. Shigeta, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentBias Temperature Instability	1998	16

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