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Effect of H<sub>2</sub> Annealing on a Pt/PbZr<sub>x</sub>Ti<sub>1-x</sub>O<sub>3</sub> Interface Studied by X-Ray Photoelectron Spectroscopy
38
Citations
6
References
1997
Year
Materials ScienceIi-vi SemiconductorSchottky Barrier HeightX-ray SpectroscopyEngineeringPhysicsCrystalline DefectsElectron SpectroscopyCondensed Matter PhysicsQuantum MaterialsApplied PhysicsX-ray Photoelectron SpectroscopySemiconductor MaterialThin FilmsH 2Chemical Reaction
The chemical reaction and the change in the Schottky barrier height at the Pt/PbZr x Ti 1- x O 3 (PZT) interface as a result of annealing was studied by in-vacuo X-ray photoelectron spectroscopy. Annealing at 320° C produced metallic Pb atoms which migrated on the Pt surface. There were more of these atoms when the annealing was done in H 2 than in a vacuum. After H 2 annealing, the core level peaks for the elements in the PZT showed a band bending shift of ∼0.4 V toward higher binding energy, indicating that the n-type Schottky barrier height at the Pt/PZT interface was lowered by the H 2 annealing.
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