I. Kaiander

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Physical review. B, Condensed matter · 2000 · 207 citations

Aluminium Nitride, Engineering, Electronic Properties +17

Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Ch. Ribbat, R.L. Sellin, I. Kaiander et al. · Applied Physics Letters · 2003 · 100 citations

Optical Materials, Quantum Photonics, Engineering +21

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

M. V. Maximov, Levon V. Asryan, Yu. M. Shernyakov et al. · IEEE Journal of Quantum Electronics · 2001 · 82 citations

Inas/gaas Quantum Dots, Photonics, Optical Pumping +13

1.24 μ m InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

I. Kaiander, R.L. Sellin, T. Kettler et al. · Applied Physics Letters · 2004 · 56 citations · Full text

Engineering, Laser Applications, Laser Material +18

Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laser

M. V. Maximov, Yu. M. Shernyakov, I. Kaiander et al. · Electronics Letters · 1999 · 50 citations