TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

Susanna Reggiani, Gaetano Barone, Stefano Poli, +6

IEEE Transactions on Electron Devices

EngineeringStress BiasesPower ElectronicsFull Band StructureSemiconductor Device +15

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

Stefano Poli, Marco Pala, T. Poiroux, +2

IEEE Transactions on Electron Devices

SemiconductorsElectron DensityElectrical EngineeringSemiconductor TechnologyEngineering +13

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Roberto Grassi, Stefano Poli, Elena Gnani, +3

Solid-State Electronics

Materials ScienceGraphene NanomeshesEngineeringCarbon-based MaterialPhysics +7

Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

Susanna Reggiani, Stefano Poli, M. Denison, +5

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringEngineeringHigh-gate Stress BiasesLinear Transport Regime +10

Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

Stefano Poli, Susanna Reggiani, A. Gnudi, +2

IEEE Transactions on Electron Devices

EngineeringNanocomputingSemiconductor DeviceUltimate Scaling LimitsTunneling Microscopy +16

Characterization and modeling of electrical stress degradation in STI-based integrated power devices

Susanna Reggiani, G. Barone, Elena Gnani, +8

Solid-State Electronics

Electrical Stress DegradationElectrical EngineeringEngineeringHardware ReliabilityPower Device +6

Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

Stefano Poli, Marco Pala, T. Poiroux

IEEE Transactions on Electron Devices

Charge ExcitationsSilicon Nanowire FetsEngineeringFull Quantum TreatmentCharge Transport +18

Analysis of HCS in STI-based LDMOS transistors

Susanna Reggiani, Stefano Poli, Elena Gnani, +6

Device ModelingLateral Dmos TransistorElectrical EngineeringEngineeringStress-induced Leakage Current +8

Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors

Stefano Poli, Susanna Reggiani, M. Denison, +5

IEEE Electron Device Letters

Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +11

Optimization and Analysis of the Dual n/p-LDMOS Device

Stefano Poli, Susanna Reggiani, Rupendra Kumar Sharma, +4

IEEE Transactions on Electron Devices

Low-power ElectronicsSwitching PerformanceElectrical EngineeringDrain BiasesEngineering +11