C. Parker

A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry, R. Chau, Changhwan Choi et al. · 2007 · 829 citations

Engineering, Computer Engineering, Electrical Engineering +17

Ultra-fast silicon detectors

H. F-W. Sadrozinski, S. Ely, V. Fadeyev et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2013 · 123 citations · Full text

An advanced low power, high performance, strained channel 65nm technology

S. Tyagi, C. Kenyon, S.-H. Lee et al. · 2005 · 65 citations

Engineering, Electrical Engineering, Microelectronics +13

Sensors for ultra-fast silicon detectors

H. F-W. Sadrozinski, M. Baselga, S. Ely et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2014 · 52 citations

Engineering, Electrical Engineering, Physics +12

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

Y. Unno, Sarah Edwards, S. Pyatt et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2014 · 46 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16