Hisashi Katahama

Relative Raman intensities of the folded modes in SiC polytypes

Satοru Nakashima, Hisashi Katahama, Y. Nakakura et al. · Physical review. B, Condensed matter · 1986 · 92 citations

Engineering, Surface-enhanced Raman Scattering, Spectroscopic Property +19

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

Yoshimichi Okano, Mitsuhiro Shigeta, Hiroyuki Seto et al. · Japanese Journal of Applied Physics · 1990 · 56 citations

Semiconductors, Electrical Engineering, Engineering +13

Si doping and MBE growth of GaAs on tilted (111)A substrates

Mitsuhiro Shigeta, Yoshimichi Okano, H. Seto et al. · Journal of Crystal Growth · 1991 · 56 citations

Electrical Engineering, Engineering, Si Doping +6

Dynamics of inter- and intra-growth-island exciton localization in GaAs single quantum wells

Kazue Fujiwara, Hisashi Katahama, K. Kanamoto et al. · Physical review. B, Condensed matter · 1991 · 39 citations

Quantum Science, Photonics, Excitonic Transitions +15

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

Koji Sueoka, Masanori Akatsuka, Mitsuharu Yonemura et al. · Journal of The Electrochemical Society · 2000 · 32 citations

Materials Science, Semiconductors, Chemical Engineering +14