Relative Raman intensities of the folded modes in SiC polytypes

Satοru Nakashima, Hisashi Katahama, Y. Nakakura, +1

Physical review. B, Condensed matter

EngineeringSurface-enhanced Raman ScatteringSpectroscopic PropertyPolariton DynamicOptical Properties +17

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

Yoshimichi Okano, Mitsuhiro Shigeta, Hiroyuki Seto, +3

Japanese Journal of Applied Physics

SemiconductorsElectrical EngineeringEngineeringCrystalline DefectsPhysics +11

Si doping and MBE growth of GaAs on tilted (111)A substrates

Mitsuhiro Shigeta, Yoshimichi Okano, H. Seto, +4

Journal of Crystal Growth

Electrical EngineeringEngineeringSi DopingMbe GrowthApplied Physics +4

Dynamics of inter- and intra-growth-island exciton localization in GaAs single quantum wells

Kazue Fujiwara, Hisashi Katahama, K. Kanamoto, +2

Physical review. B, Condensed matter

Quantum SciencePhotonicsExcitonic TransitionsEngineeringLocalized Excited State +13

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

Koji Sueoka, Masanori Akatsuka, Mitsuharu Yonemura, +3

Journal of The Electrochemical Society

Materials ScienceSemiconductorsChemical EngineeringEpitaxial GrowthEpitaxial Wafers +12

Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

Yoshimichi Okano, Hiroyuki Seto, Hisashi Katahama, +3

Japanese Journal of Applied Physics

Optical MaterialsEngineeringSemiconductor MaterialsOptoelectronic DevicesHeavily Si-doped Gaas +14

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

Koji Sueoka, Masanori Akatsuka, Hisashi Katahama, +1

Journal of The Electrochemical Society

Materials ScienceMaterials EngineeringSlip DislocationEngineeringDislocation Interaction +13

Raman scattering study of interlayer bonding in CdI2 AND SnS2 under hydrostatic pressure: analysis by use of Van Der Waals interaction

Hisashi Katahama, Satοru Nakashima, Akiyoshi Mitsuishi, +2

Journal of Physics and Chemistry of Solids

Materials ScienceHydrostatic PressureEngineeringNanomaterialsNanotechnology +6

Computer Simulation for Morphology, Size, and Density of Oxide Precipitates in CZ Silicon

Koji Sueoka, Masanori Akatsuka, Masahiko Okui, +1

Journal of The Electrochemical Society

EngineeringCrystal Growth TechnologyOxygen PrecipitationSilicon On InsulatorDefect Tolerance +17

Internal Gettering for Ni Contamination in Czochralski Silicon Wafers

Koji Sueoka, Shinsuke Sadamitsu, Yasuo Koike, +2

Journal of The Electrochemical Society

Materials EngineeringMaterials ScienceChemical EngineeringEngineeringCrystalline Defects +9