Jeffrey C. Gelpey - Concepedia

Author

Jeffrey C. Gelpey

Eaton (United States)

Also Known As

J. C. Gelpey, J. Gelpey, J.C. Gelpey, Jeffrey C. Gelpey, Jeffrey Gelpey

Publications

429

Citations

H-Index

Concepts

All Affiliations

Eaton (United States)IBM Research - Thomas J. Watson Research Center Massachusetts Institute of Technology Eaton (Taiwan)Varian Medical Systems (United States)

About

Jeffrey C. Gelpey is an author at Eaton (United States) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	313
2	Applied Physics	9	9	254
3	Electrical Engineering	6	6	192
4	Education	1	1	16
5	Materials Engineering	1	1	35

Jeffrey C. Gelpey

Publications

333

Citations

H-Index

Page 1

	Year	Citations
Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp K. Tabatabaie‐Alavi, Anwesha Choudhury, Clifton G. Fonstad, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1983	58
Rapid thermal annealing of boron-implanted silicon using an ultrahigh power arc lamp R. T. Hodgson, V. R. Deline, Sebastian Mäder, Applied Physics Letters Dopant Diffusion RateEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	1984	55
Rapid thermal annealing/chemical vapor deposition and integrated processing D. Hodul, Jeffrey C. Gelpey, M.L. Green, Materials ScienceMaterials EngineeringIon ImplantationEngineeringIon Implant	1989	35
Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp Anwesha Choudhury, K. Tabatabaie‐Alavi, Clifton G. Fonstad, Applied Physics Letters EngineeringRoom-temperature Be ImplantsOptoelectronic DevicesIntegrated CircuitsVacuum Device	1983	32
Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp K. Tabatabaie‐Alavi, Anwesha Choudhury, H. Kanbe, Applied Physics Letters SemiconductorsBe-implanted GaasElectrical EngineeringElectrical CharacteristicsEngineering	1983	19
Photoluminescence from rapid thermal annealed and pulsed-laser-annealed, ion-implanted Si J. Wagner, Jeffrey C. Gelpey, R. T. Hodgson Applied Physics Letters Materials ScienceIon ImplantationSolid-state LightingEngineeringPhotoluminescence	1984	18
Temperature Measurement in Rapid Thermal Processing with Focus on the Application to Flash Lamp Annealing Denise Reichel, W. Skorupa, W. Lerch, Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences EngineeringMeasurementMechanical EngineeringEducationOptical Properties	2011	16
Gas Flow Engineering in Rapid Thermal Processing Z. Nényei, H. Sommer, Jeffrey C. Gelpey, MRS Proceedings EngineeringHeat Transfer EnhancementGas Flow EngineeringHeat TransferGas-liquid Flow	1994	16
Process Control for a Rapid Optical Annealing System Jeffrey C. Gelpey, Paul O. Stump, John W. Smith MRS Proceedings PhotonicsOptical MaterialsEngineeringOptical PropertiesProcess Control	1985	15
Rapid Annealing of Silicon R. T. Hodgson, V. R. Deline, S. Mader, MRS Proceedings EngineeringPhysicsMicrofabricationApplied PhysicsRapid Annealing	1983	15

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