Jeffrey C. Gelpey

Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp

K. Tabatabaie‐Alavi, Anwesha Choudhury, Clifton G. Fonstad et al. · Applied Physics Letters · 1983 · 58 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Rapid thermal annealing of boron-implanted silicon using an ultrahigh power arc lamp

R. T. Hodgson, V. R. Deline, Sebastian Mäder et al. · Applied Physics Letters · 1984 · 55 citations

Dopant Diffusion Rate, Engineering, Optoelectronic Devices +16

Rapid thermal annealing/chemical vapor deposition and integrated processing

D. Hodul, Jeffrey C. Gelpey, M.L. Green et al. · 1989 · 35 citations

Materials Science, Materials Engineering, Ion Implantation +14

Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

Anwesha Choudhury, K. Tabatabaie‐Alavi, Clifton G. Fonstad et al. · Applied Physics Letters · 1983 · 32 citations

Engineering, Room-temperature Be Implants, Optoelectronic Devices +18

Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

K. Tabatabaie‐Alavi, Anwesha Choudhury, H. Kanbe et al. · Applied Physics Letters · 1983 · 19 citations

Semiconductors, Be-implanted Gaas, Electrical Engineering +15