Yang-Yu Fan

Modeling of direct tunneling current through gate dielectric stacks

S. Mudanai, Yang-Yu Fan, Qiqing Ouyang et al. · IEEE Transactions on Electron Devices · 2000 · 65 citations

Device Modeling, Gate Dielectric Stack, Electrical Engineering +12

Physically based quantum-mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT /spl sim/ 1 nm) SiO/sub 2/ and high-/spl kappa/ gate stacks

Fei Li, S. Mudanai, Yang-Yu Fan et al. · IEEE Transactions on Electron Devices · 2006 · 35 citations

Device Modeling, Electrical Engineering, Engineering +14

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor

Yang-Yu Fan, R. Nieh, J.C. Lee et al. · IEEE Transactions on Electron Devices · 2002 · 27 citations

Engineering, Current Model, Silicon On Insulator +16

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: its tradeoff with gate capacitance

Yang-Yu Fan, Qi Xiang, Jie An et al. · IEEE Transactions on Electron Devices · 2003 · 15 citations

Gate Dielectrics, Electrical Engineering, Gate Current Performance +15