F.H.M. Sanders

Ion-assisted etching of silicon by molecular chlorine

F.H.M. Sanders, A. W. Kolfschoten, J. Dieleman et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 65 citations

Engineering, Chemistry, Silicon On Insulator +17

Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions

J. Dieleman, F.H.M. Sanders, A. W. Kolfschoten et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 64 citations

Engineering, Integrated Circuits, Chemistry +21

Etching of silicon by SF6 induced by ion bombardment

D. J. Oostra, A. Haring, A.E. De Vries et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 31 citations

Materials Engineering, Materials Science, Engineering +6

Influence of temperature on the growth of TiN films by plasma-assisted chemical vapour deposition

F.H.M. Sanders, Göran Verspui · Thin Solid Films · 1988 · 28 citations

Materials Science, Chemical Engineering, Tin Films +8

Ion-assisted etching of silicon by SF6

D. J. Oostra, A. Haring, A.E. De Vries et al. · Applied Physics Letters · 1985 · 27 citations

Ion-assisted Etching, Engineering, Integrated Circuits +16