G Margaret Wells

Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

Amitava Chatterjee, R. A. Chapman, G. Dixit et al. · 2002 · 56 citations

Poly Gate, Electrical Engineering, Engineering +13

Synchrotron-radiation-induced surface nitridation of silicon at room temperature

F. Cerrina, Barry Lai, G Margaret Wells et al. · Applied Physics Letters · 1987 · 39 citations · Full text

Materials Science, Room Temperature, Surface Characterization +13

Radiation stability of SiC and diamond membranes as potential x-ray lithography mask carriers

G Margaret Wells, Stuart Palmer, F. Cerrina et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 33 citations

X-ray Spectroscopy, Engineering, Electron-beam Lithography +18

An improved boron nitride technology for synchrotron x-ray masks

R. Lévy, Douglas J. Resnick, R. C. Frye et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 33 citations

Materials Science, Nonstoichiometric Boron, Synchrotron Radiation +15

SiC membranes for x-ray masks produced by laser ablation deposition

S. Boily, Mohamed Chaker, H. Pépin et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 28 citations

Materials Engineering, Materials Science, Advanced Laser Processing +14