M.A. diForte-Poisson

Testing the Temperature Limits of GaN-Based HEMT Devices

David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 155 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

David Maier, M. Alomari, N. Grandjean et al. · IEEE Electron Device Letters · 2012 · 114 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InP

M. A. Hopkins, R. J. Nicholas, P. Pfeffer et al. · Semiconductor Science and Technology · 1987 · 95 citations

Natural Sciences, Materials Science, Physics +17

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan et al. · 2006 · 85 citations

Engineering, Electrical Engineering, Physics +14

Diamond overgrown InAlN/GaN HEMT

M. Alomari, Michele Dipalo, Stefano Rossi et al. · Diamond and Related Materials · 2011 · 66 citations · Full text

Engineering, Materials Engineering, Blasting +4