K. Fujito

Defect reduction in (1120) <i>a</i>-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell, Feng Wu, Michael D. Craven et al. · Applied Physics Letters · 2003 · 175 citations

Natural Sciences, Materials Engineering, Materials Science +17

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima et al. · Journal of Applied Physics · 2018 · 147 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN

A. Hirai, Zhongyuan Jia, Mathew C. Schmidt et al. · Applied Physics Letters · 2007 · 80 citations

Engineering, Materials Engineering, Materials Science +15

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

Shigefusa F. Chichibu, K. Hazu, Y. Ishikawa et al. · Journal of Applied Physics · 2012 · 78 citations

Engineering, Materials Engineering, Materials Science +17

Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes

Robert M. Farrell, Po Shan Hsu, Daniel A. Haeger et al. · Applied Physics Letters · 2010 · 70 citations

Engineering, Electrical Engineering, Materials Science +17