Myungkwan Ryu

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Kwang Hwan Ji, Yeon‐Gon Mo, Jong Han Jeong et al. · IEEE Electron Device Letters · 2010 · 182 citations

Engineering, Electrical Engineering, Physics +17

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

Hyun‐Suk Kim, Sang Ho Jeon, Joon Seok Park et al. · Scientific Reports · 2013 · 166 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

Eunha Lee, Anass Benayad, T. Shin et al. · Scientific Reports · 2014 · 96 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability

Hyun‐Suk Kim, Joon Seok Park, Hyun-Kwang Jeong et al. · ACS Applied Materials & Interfaces · 2012 · 73 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

Kyung Min Kim, Woong Hee Jeong, Dong Lim Kim et al. · IEEE Electron Device Letters · 2011 · 70 citations

Engineering, Electrical Engineering, Materials Science +17