Kunho Kwak

The revolutionary and truly 3-dimensional 25F/sup 2/ SRAM technology with the smallest S/sup 3/ ( stacked single-crystal Si) cell, 0.16um/sup 2/, and SSTFT (atacked single-crystal thin film transistor) for ultra high density SRAM

Soon‐Moon Jung, Jaehoon Jang, Wonseok Cho et al. · 2004 · 46 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 500-MHz DDR High-Performance 72-Mb 3-D SRAM Fabricated With Laser-Induced Epitaxial c-Si Growth Technology for a Stand-Alone and Embedded Memory Application

Soon‐Moon Jung, Hoon Lim, Kunho Kwak et al. · IEEE Transactions on Electron Devices · 2010 · 27 citations

Engineering, Computer Engineering, Electrical Engineering +17

High Speed and Highly Cost effective 72M bit density S<sup>3</sup> SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory

Soon -Moon Jung, Hoon Lim, Chadong Yeo et al. · 2007 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +17

Highly area efficient and cost effective double stacked S/sup 3/ (stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM

Soon‐Moon Jung, W.S. Cho, Hoosung Cho et al. · 2004 · 18 citations

Engineering, Computer Engineering, Electrical Engineering +17