J. Yugami

Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

Shigeo Tsujikawa, Toshiyuki Mine, Kenji Watanabe et al. · 2003 · 76 citations

Natural Sciences, Electrical Engineering, Physics +17

Analysis of detrap current due to oxide traps to improve flash memory retention

R. Yamada, Yuki Mori, Yutaka Okuyama et al. · 2002 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Kazuyoshi Torii, Yasuhiro Shimamoto, Shimpei Tsujikawa et al. · Applied Physics Letters · 2004 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

A novel analysis method of threshold voltage shift due to detrap in a multi-level flash memory

R. Yamada, Tomoko Sekiguchi, Yutaka Okuyama et al. · 2002 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +16

Evidence for bulk trap generation during NBTI phenomenon in pMOSFETs with ultrathin SiON gate dielectrics

Shigeo Tsujikawa, J. Yugami · IEEE Transactions on Electron Devices · 2005 · 32 citations

Engineering, Electrical Engineering, Materials Science +17