J. P. Nys

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

N. V. Sibirev, G. É. Cirlin, Wanghua Chen et al. · Physical Review B · 2009 · 180 citations

Natural Sciences, Materials Engineering, Materials Science +17

Imaging the Wave-Function Amplitudes in Cleaved Semiconductor Quantum Boxes

B. Grandidier, Yann‐Michel Niquet, B. Legrand et al. · Physical Review Letters · 2000 · 104 citations

Natural Sciences, Materials Science, Physics +17

Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

Bernard Legrand, B. Grandidier, J. P. Nys et al. · Applied Physics Letters · 1998 · 87 citations

Natural Sciences, Materials Science, Physics +15

Atomic-scale study of GaMnAs/GaAs layers

B. Grandidier, J. P. Nys, Christophe Delerue et al. · Applied Physics Letters · 2000 · 78 citations

Natural Sciences, Materials Science, Physics +17

Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs

G. Mahieu, B. Grandidier, D. Deresmes et al. · Physical Review Letters · 2005 · 63 citations · Full text

Natural Sciences, Materials Science, Physics +17