Jae-Man Yoon

A 31 ns Random Cycle VCAT-Based 4F$^{2}$ DRAM With Manufacturability and Enhanced Cell Efficiency

Ki‐Whan Song, Jin‐Young Kim, Jae-Man Yoon et al. · IEEE Journal of Solid-State Circuits · 2010 · 33 citations

Enhanced Cell Efficiency, Electrical Engineering, Non-volatile Memory +13

Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cell

Ju Hyun Kim, W. C. Lim, Ung Hwan Pi et al. · 2014 · 22 citations

Non-volatile Memory, I-pma Mtj Cell, Engineering +16

Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond

C.H. Lee, Jae-Man Yoon, C. Lee et al. · 2004 · 22 citations

Finfet Dram, Non-volatile Memory, Electrical Engineering +12

A Novel Low Leakage Current VPT(Vertical Pillar Transistor) Integration for 4F2 DRAM Cell Array with sub 40 nm Technology

Jae-Man Yoon, Kang‐Yoon Lee, Seungbae Park et al. · 2006 · 14 citations

Nm Technology, Electrical Engineering, Non-volatile Memory +8