Kian Siong Ang - Concepedia

Author

Kian Siong Ang

Also Known As

Ang, K. S., Ang, Kian Siong, K. S Ang, K. S. ANG, K. S. Ang, K.S Ang, K.S. Ang, Kian Ang, Kian Siong ANG, Kian Siong Ang

Publications

920

Citations

H-Index

Concepts

All Affiliations

Nanyang Technological University University of Surrey Singapore-MIT Alliance for Research and Technology Institute of Materials Research and Engineering Agency for Science, Technology and Research

About

Kian Siong Ang is an author at Nanyang Technological University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	565
2	Applied Physics	12	12	413
3	Electrical Engineering	11	11	389
4	Medicine	1	1	64
5	Computer Engineering	1	1	10

Kian Siong Ang

Publications

787

Citations

H-Index

Page 1

	Year	Citations
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G. Ye, H. Wang, S. Arulkumaran, Applied Physics Letters SemiconductorsGate DielectricsElectrical EngineeringElectronic DevicesEngineering	2013	82
Arthroscopic treatment of painful snapping of the scapula by using a new superior portal Attila Pavlik, Kian Siong Ang, Jennifer Coghlan, Arthroscopy The Journal of Arthroscopic and Related Surgery New Superior PortalPainful SnappingThoracic SurgerySurgeryArthroscopic Technique	2003	64
Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack S. Arulkumaran, Geok Ing Ng, S. Vicknesh, Applied Physics Express	2013	60
Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate S. Arulkumaran, Geok Ing Ng, S. Vicknesh, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2012	59
Band alignment between GaN and ZrO2 formed by atomic layer deposition Gang Ye, Hong Wang, S. Arulkumaran, Applied Physics Letters Materials ScienceOxide HeterostructuresSemiconductorsWide-bandgap SemiconductorEngineering	2014	42
GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE Ravikiran Lingaparthi, K. Radhakrishnan, N. Dharmarasu, IEEE Sensors Journal Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsPhotodetectors	2016	42
Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate S. Arulkumaran, Geok Ing Ng, S. Vicknesh, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2012	41
A Broad-Band Quarter-Wavelength Impedance Transformer With Three Reflection Zeros Within Passband Kian Siong Ang, Changhee Lee, Yoke Choy Leong IEEE Transactions on Microwave Theory and Techniques EngineeringAntennaTransmission LineReflection ZerosComputational Electromagnetics	2004	40
Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN Yunwei Li, Geok Ing Ng, S. Arulkumaran, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesReverse Voltage	2017	39
Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon Yang Li, Geok Ing Ng, S. Arulkumaran, Applied Physics Express	2013	38

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