Kian Siong Ang

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

G. Ye, H. Wang, S. Arulkumaran et al. · Applied Physics Letters · 2013 · 82 citations · Full text

Semiconductors, Gate Dielectrics, Electrical Engineering +12

Arthroscopic treatment of painful snapping of the scapula by using a new superior portal

Attila Pavlik, Kian Siong Ang, Jennifer Coghlan et al. · Arthroscopy The Journal of Arthroscopic and Related Surgery · 2003 · 64 citations

New Superior Portal, Painful Snapping, Thoracic Surgery +5

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

S. Arulkumaran, Geok Ing Ng, S. Vicknesh et al. · Applied Physics Express · 2013 · 60 citations · Full text

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

S. Arulkumaran, Geok Ing Ng, S. Vicknesh et al. · Japanese Journal of Applied Physics · 2012 · 59 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Band alignment between GaN and ZrO2 formed by atomic layer deposition

Gang Ye, Hong Wang, S. Arulkumaran et al. · Applied Physics Letters · 2014 · 42 citations · Full text

Materials Science, Oxide Heterostructures, Semiconductors +14