Ravikiran Lingaparthi

Surface related tunneling leakage in <i>β</i>-Ga₂O₃ (001) vertical Schottky barrier diodes

Ravikiran Lingaparthi, Kohei Sasaki, Quang Tu Thieu et al. · Applied Physics Express · 2019 · 44 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +18

GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

Ravikiran Lingaparthi, K. Radhakrishnan, N. Dharmarasu et al. · IEEE Sensors Journal · 2016 · 42 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Surface states on (001) oriented <b> <i>β</i> </b>-Ga2O3 epilayers, their origin, and their effect on the electrical properties of Schottky barrier diodes

Ravikiran Lingaparthi, Quang Tu Thieu, Kimiyoshi Koshi et al. · Applied Physics Letters · 2020 · 42 citations

Engineering, Electrical Properties, Semiconductors +18

Effects of Oxygen Annealing of <i>β</i> -Ga ₂ O ₃ Epilayers on the Properties of Vertical Schottky Barrier Diodes

Ravikiran Lingaparthi, Quang Tu Thieu, Kohei Sasaki et al. · ECS Journal of Solid State Science and Technology · 2020 · 33 citations

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

N. Dharmarasu, K. Radhakrishnan, Manvi Agrawal et al. · Applied Physics Express · 2012 · 21 citations

Materials Engineering, Semiconductors, Electrical Engineering +13