Shigekazu Izumi

Less than 10 defects/cm2 · μm in molecular beam epitaxy grown GaAs by arsenic cracking

Shigekazu Izumi, N. Hayafuji, T. Sonoda et al. · Journal of Crystal Growth · 1995 · 15 citations

Engineering, Electrical Engineering, Materials Science +15

Environmental safety issues for semiconductors (research on scarce materials recycling)

Shigekazu Izumi · Thin Solid Films · 2004 · 11 citations

Engineering, Materials Engineering, Materials Science +12

Study on the accumulated impurities at the epilayer/substrate interface and their influence on the leakage current of metal-semiconductor-field effect transistors

Shigekazu Izumi, N. Yoshida, H. Takano et al. · Journal of Crystal Growth · 1993 · 10 citations

Engineering, Electrical Engineering, Materials Science +16

Chemical beam epitaxial growth of Si-doped GaAs and InP by using silicon tetraiodide

Shigekazu Izumi, N. Hayafuji, Kazuhiko Ito et al. · Applied Physics Letters · 1996 · 10 citations

Engineering, Materials Engineering, Materials Science +17