Yanning Sun

Wafer-Scale Graphene Integrated Circuit

Yu-Ming Lin, Alberto Valdes‐Garcia, Shu‐Jen Han et al. · Science · 2011 · 904 citations

Engineering, Electrical Engineering, Materials Science +14

Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors

Shu‐Jen Han, Zhihong Chen, Ageeth A. Bol et al. · IEEE Electron Device Letters · 2011 · 72 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

Yanning Sun, E. Kiewra, Steven J. Koester et al. · IEEE Electron Device Letters · 2007 · 65 citations

Engineering, Electrical Engineering, Microelectronics +16

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

Steven J. Koester, E. Kiewra, Yanning Sun et al. · Applied Physics Letters · 2006 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology

Uttam Singisetti, Mark A. Wistey, Gregory J. Burek et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 36 citations

Engineering, Electrical Engineering, Materials Science +17