Muhammad Asad

Graphene Field-Effect Transistors With High Extrinsic <inline-formula> <tex-math notation="LaTeX">${f}_{T}$</tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">${f}_{\mathrm{max}}$</tex-math> </inline-formula>

Marlene Bonmann, Muhammad Asad, Xinxin Yang et al. · IEEE Electron Device Letters · 2018 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Science +11

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

Muhammad Asad, Marlene Bonmann, Xinxin Yang et al. · IEEE Journal of the Electron Devices Society · 2020 · 23 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

Muhammad Asad, Kjell Jeppson, Andrei Vorobiev et al. · IEEE Transactions on Electron Devices · 2021 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Integrated 10-GHz Graphene FET Amplifier

Ahmed Hamed, Muhammad Asad, Muh‐Dey Wei et al. · IEEE Journal of Microwaves · 2021 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +13

In vitro study of titanium nitride electrodes for neural stimulation

Naser Pour Aryan, Muhammad Asad, Christian Brendler et al. · 2011 · 19 citations

Natural Sciences, Biomedical Engineering, Materials Science +17