Saurabh Pandey

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

William M. Waller, Mark Gajda, Saurabh Pandey et al. · IEEE Transactions on Electron Devices · 2017 · 31 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

Saurabh Pandey, Daniela Cavalcoli, Beatrice Fraboni et al. · Applied Physics Letters · 2012 · 30 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +15

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

William M. Waller, Mark Gajda, Saurabh Pandey et al. · IEEE Transactions on Electron Devices · 2017 · 30 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy

Daniela Cavalcoli, Saurabh Pandey, Beatrice Fraboni et al. · Applied Physics Letters · 2011 · 27 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +18

Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

Isabella Rossetto, Matteo Meneghini, Saurabh Pandey et al. · IEEE Transactions on Electron Devices · 2016 · 23 citations

Electrical Engineering, Semiconductor Device, Engineering +12