Yuehua Dai - Concepedia

Author

Yuehua Dai

Anhui University ORCID

Also Known As

Dai Yue-Hua, Dai Yue-hua, Dai Yuehua, Dai, Yuehua, Y. Dai, Y.B. Dai, Yue-Hua Dai, YueHua Dai, Yuehua Dai

Publications

857

Citations

H-Index

Concepts

All Affiliations

Anhui University Chinese Academy of Sciences Institute of Microelectronics

About

Yuehua Dai is an author at Anhui University specializing in engineering, applied physics, and condensed matter physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	369
2	Applied Physics	9	9	369
3	Chemistry	2	2	93
4	Natural Sciences	1	1	18
5	Computer Engineering	1	1	53

Yuehua Dai

Publications

665

Citations

H-Index

Page 1

	Year	Citations
First-principles calculations on Al/AlB2 interfaces Yufeng Han, Yuehua Dai, J. Wang, Applied Surface Science Aluminium NitrideEngineeringPhysicsApplied PhysicsCondensed Matter Physics	2011	145
A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition Wuhong Xue, Gang Liu, Zhicheng Zhong, Advanced Materials	2017	96
Great enhancement of electromagnetic wave absorption of MWCNTs@carbonaceous CoO composites derived from MWCNTs-interconnected zeolitic imidazole framework Shibin Lu, Ying Meng, Haibo Wang, Applied Surface Science Materials ScienceElectromagnetic Wave AbsorptionGreat EnhancementMicrowave CeramicChemistry	2019	75
Highly sensitive capacitive flexible 3D-force tactile sensors for robotic grasping and manipulation Tianyang Yao, Xiaohui Guo, Cuicui Li, Journal of Physics D Applied Physics	2020	62
Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode Wen-Tai Lian, Hangbing Lv, Qi Liu, IEEE Electron Device Letters Semiconductor TechnologyNon-volatile MemoryElectrical EngineeringEngineeringElectronic Engineering	2011	53
Metal dopants in HfO<sub>2</sub>-based RRAM: first principle study Yuanyang Zhao, Jiayu Wang, Jianbin Xu, Journal of Semiconductors Materials ScienceElectron DensityMaterials EngineeringMetal DopantsEngineering	2014	44
Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study Yuehua Dai, Zhiyong Pan, Feifei Wang, AIP Advances	2016	40
Effects of interaction between defects on the uniformity of doping HfO<sub>2</sub>-based RRAM: a first principle study Qiang Zhao, Maoxiu Zhou, Wei Zhang, Journal of Semiconductors Materials EngineeringMaterials ScienceElectrical EngineeringDoped Hfo2Engineering	2013	36
First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM Yuehua Dai, Yuanyang Zhao, Jiayu Wang, AIP Advances Non-volatile MemoryPrinciple SimulationsEngineeringPhase Change MemoryOxygen Vacancy	2015	27
Development of n-body potentials for hcp–bcc and fcc–bcc binary transition metal systems J.H. Li, Yuehua Dai, X. D. Dai, Computational Materials Science Materials ScienceEngineeringN-body PotentialsCubic Boron NitrideApplied Physics	2008	19

Page 1