X. Huang

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

X. Huang, G. F. Jiao, Wei Cao et al. · IEEE Electron Device Letters · 2010 · 70 citations

Device Modeling, Electrical Engineering, Hc Stress +11

New degradation mechanisms and reliability performance in tunneling field effect transistors

G. F. Jiao, Zhixian Chen, H.Y. Yu et al. · 2009 · 61 citations

Engineering, Hc Degradation, Semiconductor Device +19

A 58.9-dB ACR, 85.5-dB SBA, 5–26-MHz Configurable-Bandwidth, Charge-Domain Filter in 65-nm CMOS

Mingfeng Huang, Ming-Ching Kuo, Tzu-Yi Yang et al. · IEEE Journal of Solid-State Circuits · 2013 · 19 citations

Electrical Engineering, Charge-domain Filter, Engineering +12

Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

G. F. Jiao, Zhenhong Chen, H.Y. Yu et al. · IEEE Electron Device Letters · 2010 · 17 citations

Reliability, Reliability Issues, Electrical Engineering +13

Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen

R.J. Mears, Nuo Xu, N. Damrongplasit et al. · 2012 · 12 citations

Electrical Engineering, Engineering, Variability Reduction +14