Keng-Yung Lin

High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain

C. N. Wu, C. C. Tseng, Y. T. Fanchiang et al. · Scientific Reports · 2018 · 71 citations · Full text

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

R. L. Chu, T. H. Chiang, W.J. Hsueh et al. · Applied Physics Letters · 2014 · 35 citations

Materials Science, Semiconductors, Electrical Engineering +12

High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by <i>off-axis</i> sputtering

C. N. Wu, C. C. Tseng, Keng-Yung Lin et al. · AIP Advances · 2017 · 31 citations · Full text

Magnetic Properties, Perpendicular Magnetic Anisotropy, Engineering +21

Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

Keng-Yung Lin, Hsien-Wen Wan, K.H.M. Chen et al. · Journal of Crystal Growth · 2019 · 23 citations

Materials Science, Epitaxial Growth, Engineering +8

Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using <i>in-situ</i> atomic-layer-deposition

Minghwei Hong, Hsien-Wen Wan, Keng-Yung Lin et al. · Applied Physics Letters · 2017 · 19 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +11