Statistics
Publications
5
Citations
141
H-Index
5
Active since
2013
Affiliations
Yoshimori Asai is an author at Transphorm (United States) specializing in electrical engineering, semiconductor devices, and engineering.
Publications per year
2013–2016
5
5
600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates
T. Kikkawa, Tsutomu Hosoda, Kenji Imanishi et al. · 2014 · 46 citations
Commercialization and reliability of 600 V GaN power switches
T. Kikkawa, Tsutomu Hosoda, K. Shono et al. · 2015 · 36 citations
Dynamic performances of GaN-HEMT on Si in cascode configuration
Tatsuya Hirose, Miki Imai, K. Joshin et al. · 2014 · 34 citations
Engineering, Electrical Engineering, Electronic Materials +16
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