Takahiro Sugimoto

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 78 citations

Engineering, Computer Engineering, Computer Science +13

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, K. Kanda, Takahiro Shimizu et al. · IEEE Journal of Solid-State Circuits · 2019 · 56 citations

Engineering, Computer Engineering, Electrical Engineering +13

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Higuchi Tsutomu, Takuyo Kodama, Koji Kato et al. · 2021 · 30 citations

Engineering, Computer Engineering, Computer Science +13

A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

K. Kanda, Noboru Shibata, Toshiki Hisada et al. · IEEE Journal of Solid-State Circuits · 2012 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 19nm 112.8mm2 64Gb Multi-level(2bit/cell) Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface

Noboru Shibata, K. Kanda, Toshiki Hisada et al. · IEICE Technical Report; IEICE Tech. Rep. · 2012 · 10 citations

Engineering, Computer Engineering, Electrical Engineering +14